Казань, Адоратского, 34
KompKZN@promavtomatic.ru
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SST25VF010A-33-4C-SAE, МикросхемаThe SST25VF010A-33-4C-SAE is a SPI Serial Flash Memory with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunnelling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF010A device significantly improves performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF010A device operates with a single 2.7 to 3.6V power supply., Serial interface architecture — SPI compatible of mode 0 and mode 3, Low power consumption — Active read current of 7mA (typical), standby current of 8µA (typical), Flexible erase capability — Uniform 4kB sectors and uniform 32kB overlay blocks, Fast erase and byte-program, Auto Address Increment (AAI) programming, Superior reliability, Flexible erase capability, End-of-write detection — Software status, Hold pin (HOLD#) — Suspends a serial sequence to the memory without deselecting the device, Write protection (WP#) — Enables/disables the lock-down function of the status register, Software write protection — Write protection through Block-Protection bits in status register
\1100717 – артикул товара с розничной ценой 64 ₽ за штуку. Купите 1100717 по специальной цене оптом или в розницу в компании Олниса. Специальная цена распространяется на всю продукцию для наших постоянных клиентов.\
\\ Купить 1100717 в Олнисе оптом или в розницу можно по телефону, отправить заявку на почту или воспользоваться формой обратной связи на нашем сайте. Доставка осуществляем в любой регион России.\
\\ Подобрат
SST25VF010A-33-4C-SAE, МикросхемаThe SST25VF010A-33-4C-SAE is a SPI Serial Flash Memory with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunnelling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF010A device significantly improves performance, while lowering power consumption. The total energy consumed is a function of the applied voltage, current and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF010A device operates with a single 2.7 to 3.6V power supply., Serial interface architecture — SPI compatible of mode 0 and mode 3, Low power consumption — Active read current of 7mA (typical), standby current of 8µA (typical), Flexible erase capability — Uniform 4kB sectors and uniform 32kB overlay blocks, Fast erase and byte-program, Auto Address Increment (AAI) programming, Superior reliability, Flexible erase capability, End-of-write detection — Software status, Hold pin (HOLD#) — Suspends a serial sequence to the memory without deselecting the device, Write protection (WP#) — Enables/disables the lock-down function of the status register, Software write protection — Write protection through Block-Protection bits in status register
\1100717 – артикул товара с розничной ценой 64 ₽ за штуку. Купите 1100717 по специальной цене оптом или в розницу в компании Олниса. Специальная цена распространяется на всю продукцию для наших постоянных клиентов.\
\\ Купить 1100717 в Олнисе оптом или в розницу можно по телефону, отправить заявку на почту или воспользоваться формой обратной связи на нашем сайте. Доставка осуществляем в любой регион России.\
\\ Подобрат
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