DMG3414U-7 Diodes

Maximum Operating Temperature: +150 °C, Number of Elements per Chip: 1, Length: 3mm, Transistor Configuration: Single, Brand: DiodesZetex, Maximum Continuous Drain Current: 4.2 A, Package Type: SOT-23, Maximum Power Dissipation: 780 mW, Mounting Type: Surface Mount, Minimum Operating Temperature: -55 °C, Width: 1.4mm, Maximum Gate Threshold Voltage: 0.9V, Height: 1.1mm, Maximum Drain Source Resistance: 37 m?, Maximum Drain Source Voltage: 20 V, Pin Count: 3, Typical Gate Charge @ Vgs: 9.6 nC @ 4.5 V, Transistor Material: Si, Channel Mode: Enhancement, Channel Type: N, Maximum Gate Source Voltage: -8 V, +8 V, Automotive: No, Configuration: Single, ECCN (US): EAR99, EU RoHS: Compliant, Lead Shape: Gull-wing, Maximum Continuous Drain Current (A): 4.2, Maximum Drain Source Resistance (mOhm): 25 4.5V, Maximum Drain Source Voltage (V): 20, Maximum Gate Source Leakage Current (nA): 100, Maximum Gate Source Voltage (V): ±8, Maximum Gate Threshold Voltage (V): 0.9, Maximum IDSS (uA): 1, Maximum Operating Temperature (°C): 150, Maximum Power Dissipation (mW): 780, Minimum Operating Temperature (°C): -55, Mounting: Surface Mount, Packaging: Tape and Reel, Part Status: Active, PCB changed: 3, PPAP: No, Product Category: Power MOSFET, Standard Package Name: SOT-23, Supplier Package: SOT-23, Typical Fall Time (ns): 9.6, Typical Gate Charge @ Vgs (nC): 9.6 4.5V, Typical Input Capacitance @ Vds (pF): 829.9 10V, Typical Rise Time (ns): 8.3, Typical Turn-Off Delay Time (ns): 40.1, Typical Turn-On Delay Time (ns): 8.1, Количество элементов на ИС: 1, Конфигурация транзистора: Одинарный, Максимальная рабочая температура: +150 C, Максимальное напряжение затвор-исток: -8 В, +8 В, Максимальное напряжение сток-исток: 20 В, Максимальное пороговое напряжение включения: 0.9V, Максимальное рассеяние мощности: 780 мВт, Максимальное сопротивление сток-исток: 37 м?, Максимальный непрерывный ток стока: 4.2 А, Материал транзистора: Кремний, Минимальная рабочая темпер